Vishay General Semiconductor SQJ152ELP-T1_GE3 MOSFETs 자동 N-채널 40 V (D-S)

Fall Time: 12 ns

Rise Time: 6.1 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13.5 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 123 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V