Vishay General Semiconductor VB20120C-E3/4W 쇼트키 다이오드 20암페어 120볼트 듀얼 트렌치MOS

Width: 9.14 mm

Height: 4.83 mm

Length: 10.45 mm

Technology: Si

Unit Weight: 1.380 g

REACH - SVHC: Details

Configuration: Dual Anode Common Cathode

Mounting Style: SMD/SMT

Termination Style: Through Hole

If - Forward Current: 20 A

Ir - Reverse Current: 700 uA

Vf - Forward Voltage: 900 mV

Ifsm - Forward Surge Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vrrm - Repetitive Reverse Voltage: 120 V