GeneSiC G3F25MT12K SiC MOSFETS 1200V 25mohm TO-247-4 G3F SiC MOSFET

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV