GeneSiC GA20JT12-263 JFETs 1200V 45A 스탠다드

Technology: SiC

Unit Weight: 1.450 g

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 282 W

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 50 mO

Vds - Drain-Source Breakdown Voltage: 1.2 kV