Infineon BCR 108 E6433 디지털 트랜지스터 NPN 실리콘 디지털 트랜지스터

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Typical Input Resistor: 2.2 kOhms

Typical Resistor Ratio: 0.047

Peak DC Collector Current: 100 mA

Emitter- Base Voltage VEBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 50 V