Infineon BFS 17W H6327 RF 바이폴라 전력 RF BIP 트랜지스터

Technology: Si

Unit Weight: 60 mg

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Operating Frequency: 1 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 280 mW

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 25 mA

Maximum DC Collector Current: 25 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 15 V