Infineon BSC084P03NS3E G MOSFETs P-채널 -30V -78.6A TDSON-8 OptiMOS P3

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 8.1 nS

Rise Time: 133.5 nS

Technology: Si

Unit Weight: 124.340 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 57.7 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 69 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 16.4 ns

Typical Turn-Off Delay Time: 33.3 nS

Id - Continuous Drain Current: 78.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 33 S

Rds On - Drain-Source Resistance: 8.4 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2 V