Infineon BSM75GD120DLC IGBT 실리콘 모듈 N-CH 1.2KV 125A

Width: 61.5 mm

Height: 17 mm

Length: 121.5 mm

Technology: Si

Unit Weight: 329.138 g

REACH - SVHC: Details

Configuration: Full Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 500 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 125 A