Infineon BSZ180P03NS3E G MOSFETs P-채널 -30V -39.6A TSDSON-8 OptiMOS P3

Width: 3.3 mm

Height: 1.1 mm

Length: 3.3 mm

Fall Time: 3 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 38.760 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 39.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18 S

Rds On - Drain-Source Resistance: 13.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 3.1 V