Infineon F3L400R07ME4_B22 IGBT 모듈 IGBT 모듈 400A 650V

Technology: Si

Unit Weight: 345 g

REACH - SVHC: Details

Configuration: Half Bridge

Pd - Power Dissipation: 1.15 kW

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 450 A