Infineon FF1500R17IP5BPSA1 IGBT 실리콘 모듈 1700 V, 1500 A 듀얼 IGBT 모듈

Technology: Si

Configuration: Dual

Pd - Power Dissipation: 1.5 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 1.5 kA