Infineon FF1800R12IE5PBPSA1 IGBT 실리콘 모듈 PP IHM I

Technology: Si

Mounting Style: Through Hole

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 1.8 kA