Infineon FF450R12KT4 IGBT 실리콘 모듈 N-CH 1.2KV 580A

Width: 61.4 mm

Height: 30.5 mm

Length: 106.4 mm

Technology: Si

Unit Weight: 340 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 2.4 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 580 A