Infineon FF600R06ME3 IGBT 모듈 IGBT 600V 600A

Technology: Si

Unit Weight: 345 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.65 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 700 A