Infineon FF600R12ME4EB11BPSA1 IGBT 실리콘 모듈 중전력 이코노

Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 600 A