Infineon FP10R12YT3 IGBT 실리콘 모듈 N-CH 1.2KV 16A

Width: 33.8 mm

Height: 12 mm

Length: 62.8 mm

Technology: Si

Unit Weight: 24 g

Configuration: 3-Phase Inverter

Mounting Style: Screw Mount

Pd - Power Dissipation: 69.5 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 16 A