Infineon FP150R07N3E4_B11 IGBT 모듈 IGBT 모듈 150A 650V

Technology: Si

Unit Weight: 300 g

REACH - SVHC: Details

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 430 W

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 150 A