Infineon FP150R12KT4_B11 IGBT 실리콘 모듈 1200 V, 150 A PIM 3상 입력 정류기 IGBT 모듈

Technology: Si

Unit Weight: 300 g

Configuration: Hex

Mounting Style: Through Hole

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 150 A