Infineon FS100R12KT4G IGBT 실리콘 모듈 N-CH 1.2KV 100A

Width: 62 mm

Height: 17 mm

Length: 122 mm

Technology: Si

Unit Weight: 300 g

Configuration: 6-Pack

Mounting Style: Screw Mount

Pd - Power Dissipation: 515 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 100 A