Infineon FS150R12KT4 IGBT 모듈 IGBT MODULE 1200V, 150A
ModelFS150R12KT4
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Width: 62 mm
Height: 17 mm
Length: 122 mm
Technology: Si
Unit Weight: 300 g
Configuration: 6-Pack
Mounting Style: Screw Mount
Pd - Power Dissipation: 750 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Continuous Collector Current at 25 C: 150 A
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