Infineon FS225R12KE4 IGBT 실리콘 모듈 N-CH 1.2KV 320A

Width: 150 mm

Height: 17 mm

Length: 162 mm

Technology: Si

Unit Weight: 1 kg

Configuration: 6-Pack

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.1 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 320 A