Infineon FS3L30R07W2H3FB11BPSA2 SiC IGBT 모듈 650 V, 30 A 3단계 IGBT 모듈

Technology: SiC

Unit Weight: 39 g

Configuration: 3-Phase Inverter

Mounting Style: Press Fit

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 30 A