Infineon FS75R07W2E3_B11A IGBT 실리콘 모듈 EASY PACK SI

Technology: Si

Unit Weight: 42 g

REACH - SVHC: Details

Configuration: 6-Pack

Mounting Style: Through Hole

Pd - Power Dissipation: 275 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 95 A