Infineon FS820R08A6P2BPSA1 하이브리드 IGBT 모듈 하이브리드 팩 드라이브

Technology: Si

Unit Weight: 720 g

Configuration: 6-Pack

Mounting Style: Screw Mount

Pd - Power Dissipation: 714 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 750 V

Collector-Emitter Saturation Voltage: 1.1 V

Continuous Collector Current at 25 C: 450 A