Infineon IFF450B12ME4S8PB11BPSA1 IGBT 실리콘 모듈 1200 V, 450 A 듀얼 IGBT 모듈

Technology: Si

Mounting Style: Screw Mount

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 450 A