Infineon IGB15N65S5ATMA1 IGBT 트랜지스터 IGBT 제품

Technology: Si

Unit Weight: 1.557 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 105 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 35 A

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 35 A