Infineon IKQ120N120CS7XKSA1 IGBT 트랜지스터 1200 V, 120 A IGBT7 S7 TO247PLUS-3핀 패키지에 역방향 다이오드 포함

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.004 kW

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 216 A