Infineon IKW08T120FKSA1 IGBT 트랜지스터 LOW LOSS 듀오팩 1200V 8A

Technology: Si

Unit Weight: 5 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 70 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 16 A