Infineon IPP60R160P6 MOSFETs 하이 파워_레거시

Width: 4.4 mm

Height: 15.65 mm

Length: 10 mm

Fall Time: 5.8 ns

Rise Time: 7.6 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 44 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 176 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12.5 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 23.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 144 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V