Infineon AIKBE50N65RF5ATMA1 IGBT 트랜지스터 SIC_디스크리트

Technology: SiC

Mounting Style: SMD/SMT

Pd - Power Dissipation: 326 W

Maximum Gate Emitter Voltage: 4.8 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 50 A

Collector-Emitter Saturation Voltage: 2.03 V