Infineon AIKQ200N75CP2XKSA1 IGBT 트랜지스터 디스크리트 스위치

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.071 kW

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 750 V

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 200 A