Infineon BAR 81W H6327 스위칭 다이오드 RF 다이오드

Technology: Si

Unit Weight: 6.400 mg

Carrier Life: 80 ns

Mounting Style: SMD/SMT

If - Forward Current: 100 mA

Ir - Reverse Current: 20 nA

Vf - Forward Voltage: 1 V

Vr - Reverse Voltage: 30 V

Pd - Power Dissipation: 100 mW

Maximum Diode Capacitance: 1 pF

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Maximum Series Resistance @ Maximum IF: 1 Ohms