Infineon BAR 88-02V H6327 스위칭 다이오드 RF 다이오드

Technology: Si

Unit Weight: 1.670 mg

Carrier Life: 500 ns

Qualification: AEC-Q100

Mounting Style: SMD/SMT

If - Forward Current: 100 mA

Ir - Reverse Current: 50 nA

Vf - Forward Voltage: 1.2 V

Vr - Reverse Voltage: 80 V

Pd - Power Dissipation: 250 mW

Maximum Diode Capacitance: 0.4 pF

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Maximum Series Resistance @ Maximum IF: 2.5 Ohms