Infineon BAS16UE6327HTSA1 RF 다이오드

Speed: Small Signal =< 200mA(Io)|Any Speed

Diode type: Standard

Mounting Type: Surface Mount

Diode Configuration: 3Independence

Reverse recovery time: 4ns

Operating temperature range: 150 C (Max)

Spannung – DC Reverse Vr Max: 80V

Spannung – Vorwärts (Vf) Max: 1.25V@150mA

Current - Average Rectified Io per Diode: 200mA(DC)

Current - Reverse Leakage with Vr Applied: 1uA@75V

Datasheet