Infineon BFP 620 H7764 RF 실리콘 저마늄 RF BIP 트랜지스터

Technology: SiGe

Unit Weight: 6 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 65 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 185 mW

Emitter- Base Voltage VEBO: 1.2 V

Continuous Collector Current: 80 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 110

Collector- Emitter Voltage VCEO Max: 2.3 V