Infineon BFP 720FESD H6327 RF 실리콘 저마늄 RF BIP 트랜지스터

Technology: SiGe

Unit Weight: 1.870 mg

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 43 GHz

Pd - Power Dissipation: 100 mW

DC Current Gain hFE Max: 400

Collector- Base Voltage VCBO: 4.9 V

Continuous Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 4.2 V