Infineon BFP 740FESD H6327 RF 실리콘 저마늄 RF BI

Technology: SiGe

Unit Weight: 1.800 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 47 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 160 mW

Continuous Collector Current: 45 mA

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 4.2 V