Infineon BFP840ESDH6327XTSA1 RF 실리콘 저마늄 RF BIP 트랜지스터

Technology: SiGe

Unit Weight: 6.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 80 GHz

Pd - Power Dissipation: 75 mW

Emitter- Base Voltage VEBO: 2.9 V

Continuous Collector Current: 35 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.25 V