Infineon BFP842ESDH6327XTSA1 RF 실리콘 저마늄 RF BIP 트랜지스터

Technology: SiGe

Unit Weight: 7 mg

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 60 GHz

Pd - Power Dissipation: 120 mW

DC Current Gain hFE Max: 450

Emitter- Base Voltage VEBO: 4.1 V

Continuous Collector Current: 40 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3.25 V