Infineon BFR 193L3 E6327 RF 바이폴라 소신호 NPN 실리콘 RF 트랜지스터

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 8 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 580 mW

DC Current Gain hFE Max: 70 at 30 mA at 8 V

Emitter- Base Voltage VEBO: 2 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 80 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 12 V