Infineon BSC025N03MS G MOSFETs N-채널 30V 100A TSDSON-8 OptiMOS 3M

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 2.4 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 113 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.3 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 28 S

Rds On - Drain-Source Resistance: 6.7 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V