Infineon BSP716NH6327XTSA1 MOSFET

Vgs(th): 1.8 V

Vgs (Max): 20V

Gate Charge (Qg): 13.1nC

Power consumption: 1.8W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 75V

Continuous drain current: 2.3A

Input Capacitance (Ciss): 315pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 160mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet