Infineon BSZ042N04NSGATMA1 MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 46nC

Power consumption: 2.1|69W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 40A

Input Capacitance (Ciss): 3700pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.2mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V