Infineon DD1200S17H4_B2 IGBT 모듈 IGBT 모듈 1200A 1700V

Technology: Si

REACH - SVHC: Details

Configuration: Dual

Pd - Power Dissipation: 1.2 MW

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current at 25 C: 1.2 kA