Infineon DF120R12W2H3_B27 IGBT 실리콘 모듈 1200 V, 120 A 부스터 IGBT 모듈

Technology: Si

Unit Weight: 36 g

REACH - SVHC: Details

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 180 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 50 A