Infineon F3L11MR12W2M1B65BOMA1 트랜지스터 실리콘 카바이드 MOSFET 배열 모듈 헥사 N-CH 1200V AG-Easy2BM 트레이

Channel Type: Dual N Channel

Power Dissipation: 20

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 100

Mosfet Module Configuration: Full Bridge

Drain Source On State Resistance: 11.3

Gate Source Threshold Voltage Max: 5.55