Infineon F3L11MR12W2M1B74BOMA1 CoolSiC MOSFET 이지 스탠다드

Fall Time: 18.5 ns

Rise Time: 23.4 ns

Technology: SiC

Configuration: 3-Phase

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 4.6 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 20 mW (1/50 W)

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Typical Turn-On Delay Time: 26.7 ns

Typical Turn-Off Delay Time: 82.9 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 11.3 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.55 V