Infineon F3L200R12W2H3PB11BPSA1 저전력 이지

IGBT Technology: IGBT 3 High Sp

IGBT Termination: Press Fit

Power Dissipation: 600

IGBT Configuration: 3-Level

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 100

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.55

Datasheet