Infineon F3L300R12MT4_B23 IGBT 실리콘 모듈 중전력 이코노

Technology: Si

Unit Weight: 345 g

REACH - SVHC: Details

Configuration: Half Bridge

Pd - Power Dissipation: 1.55 kW

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 450 A