Infineon FD1000R17IE4DB2BOSA1 IGBTs

IGBT Technology: IGBT 4

IGBT Termination: Stud|Tab

Power Dissipation: 6.25

IGBT Configuration: Single Chopper

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 1.39

Collector Emitter Voltage Max: 1.7

Collector Emitter Saturation Voltage: 2

Datasheet